OSI Laser Diode Announces 905 nm Pulsed Laser Diode with Integrated Micro Lens

New CVN 63-90ECL is hermetically sealed for field-deployed range finder apps

Edison, NJ - April 19, 2016 - OSI Laser Diode, Inc. (LDI), an OSI Systems Company, introduces the CVN 63-90ECL, a 905 nm pulsed laser diode with an integrated micro lens. The new device offers a far-field beam pattern with equivalent divergence values (8 x 8 degrees FWHM) for both the Fast (perpendicular) and the Slow (parallel) axes of emission. The adjusted far-field pattern offers higher coupling efficiency into standard spherical lens systems, making the diode ideal for critical defense applications.


Hermetically sealed in a robust 9 mm package for survivability in harsh environmental conditions, the pulsed laser diode is well suited for demanding military tasks such as field-deployed range finders. The RoHS-compliant device operates from 895 nm (min.) to 915 nm (max.), with typical wavelength operation at 905 nm. Peak power is 75 W (min.), pulse width is 100 nanoseconds (typ.) and the drive current is typically 30 A. Storage temperatures range from -40° C to +85° C; the typical operating temperature is 25 °C.

OSI Laser Diodes new CVN 63-90ECL joins the previously announced CVLL 350-CL90 pulsed laser diode with integrated micro lens that operates at 1550 nm. To learn more about these and other advanced optoelectronic products, please visit: 905 nm Pulsed Laser Diode with Integrated Micro Lens.

OSI Laser Diode, Inc. (LDI - www.laserdiode.com), founded in 1967, is a global leader in laser diode technology, providing advanced optoelectronic products that serve the military/aerospace, telecom/datacom (short and long haul), commercial, industrial, and medical markets.

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